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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-220Fa package Large collector current IC Low collector saturation voltage Complement to type 2SD1270 APPLICATIONS For power switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SB945 Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage IN Emitter-base voltage Collector current HAN C SEM GE Open base Ta=25ae OND IC TOR UC VALUE -130 -80 -7 -5 -10 2 UNIT V V V A A Open collector Collector current-peak PC Collector power dissipation TC=25ae 40 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Emitter cut-off current Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ,IB=0 IC=-4A, IB=-0.2A IC=-4A, IB=-0.2A VEB=-5V; IC=0 VCB=-100V; IE=0 IC=-0.1A ; VCE=-2V IC=-2A ; VCE=-2V IC=-0.5A; VCE=-10V,f=10MHz 45 90 MIN -80 2SB945 SYMBOL V(BR)CEO VCEsat VBEsat IEBO ICBO hFE-1 hFE-2 fT TYP. MAX UNIT V -0.5 -1.5 -50 -10 |I |I V V A A 260 30 MHz Switching times ton tstg tf Turn-on time Storage time SEM GE IC=-2A;IB1=-0.2A ,IB2=0.2A Fall time hFE-2 Classifications Q 90-180 P HAN INC 130-260 OND IC TOR UC 0.13 0.5 |I 0.13 s |I |I s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB945 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB945 SEM GE HAN INC OND IC TOR UC 4 |
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